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Principal RF Modeling engineer



California, USA · Pasadena, CA, USA · San Diego, CA, USA · San Mateo, CA, USA
Posted on Thursday, May 11, 2023


Company Overview


Renesas is a global, multi-billion dollar; publicly-traded company headquartered in Japan, with subsidiaries in 20 countries worldwide. We provide hardware and software solutions for a range of cutting-edge technologies including self-driving cars, robots, automated factory equipment, and smart home applications. We are a key supplier to the world’s leading electronics manufacturers you rely on daily. You may not see our products, but they are all around you.


Ours is a dynamic, multicultural technology company where employees learn, mentor, innovate and thrive. Renesas is extending our share in fast-growing data economy-related markets such as infrastructure and data centers, and strengthening our presence in the industrial/IoT and automotive segments. Our solutions drive products developed by major innovators around the world. Join us and build your future by being part of what’s next in electronics.

Principal RF Modeling Engineer




Highly skilled modeling engineer will be responsible for the advancement of Renesas’s GaN, GaAs, and CMOS technology modeling capabilities for RF applications. The candidate will work closely with the Technology Team, Product Development Teams, Design Automation Group, and Product Engineering to define SPICE modeling strategies, and development of new modeling methodolo,gies and advanced tool introductions. The candidate will be responsible for working closely with Renesas’s RF GaN, GaAs, and CMOS foundry partners to identify weaknesses in the existing SPICE modeling capabilities, drive improvements and creative solutions to enable our design teams to successfully introduce products that exceed our customer’s performance expectations.


Duties and Responsibilities:


•             Lead the advancement and execution of SPICE modeling capabilities of new GaN HEMT, GaAs pHEMT/HBT, and CMOS technology for RF applications

•             Support RF product development teams modeling requirements and needs, and drive creative solutions to complex problems

•             Evaluate foundry SPICE models and drive foundries to solve modeling issues and advance simulation accuracy

•             Lead test chip design, test structure characterizatiand on, model extraction activities to advance internal and foundry capabilities

•             Lead definition and execution of device/technology modeling requirements and new tool introduction

•             Actively participate in industry modeling forums and conferences through publication or event participation




•             MS or Ph.D. in EE or Physics with at least 12 years of modeling experience of GaN HEMT, GaAs pHEMT/HBT, and CMOS technologies for RF applications

•             High band gap, Bipolar, and MOSFET device physics

•             DC, RF, and load-pull Characterization of active & passive devices and substrate from sub-6GHz to mmWave range

•             Well-versed in SPICE model extraction, simulation, and EDA tool implementations

•             Good written and oral communication and project management skills

•             Preferred knowledge: RF circuit design, IC process of GaN/GaAs/CMOS, device reliability



Additional Information


  • $137,800 - $206,700 annualized salary range (Note: Disclosure as required by SB 1162 (9-27-22) for California)
  • Please note that the compensation details listed reflect the base salary only, and do not include bonus, equity, or benefits.
  • Our salary ranges are determined by role, level, and location. The range displayed on the job posting reflects the minimum and maximum target for new hire salaries for this position in California. Within the range, individual pay is determined by additional factors, including job-related skills, experience, and relevant education or training.




Renesas Electronics America is an equal opportunity and affirmative action employer, committed to celebrating diversity and fostering a work environment free of discrimination based on sex, race, religion, national origin, gender, gender identity, gender expression, age, sexual orientation, military status, veteran status, or any other basis protected by federal, state or local law.