Sr Staff Engr, RF/Wire
Renesas is one of the top global semiconductor companies in the world. We strive to develop a safer, healthier, greener, and smarter world, and our goal is to make every endpoint intelligent by offering product solutions in the automotive, industrial, infrastructure and IoT markets. Our robust product portfolio includes world-leading MCUs, SoCs, analog and power products, plus Winning Combination solutions that curate these complementary products. We are a key supplier to the world’s leading manufacturers of the electronics you rely on every day; you may not see our products, but they are all around you.
Renesas employs roughly 21,000 people in more than 30 countries worldwide. As a global team, our employees actively embody the Renesas Culture, our guiding principles based on five key elements: Transparent, Agile, Global, Innovative, and Entrepreneurial. Renesas believes in, and has a commitment to, diversity and inclusion, with initiatives and a leadership team dedicated to its resources and values. At Renesas, we want to build a sustainable future where technology helps make our lives easier. Join us and build your future by being part of what’s next in electronics and the world.
Millimeter-wave/RF PA design engineer will have a critical role in developing innovative circuits for Satcom and 5G networks and radar systems, mainly focusing on power amplifiers in silicon technologies. In this highly visible position, the mm-wave/RF PA design engineer will lead the development of the state-of-the-art millimeter-wave transmitter front-ends and work on the circuit topologies for next-generation communication and radar systems. We are looking for highly motivated and talented problem-solvers with strong backgrounds in high-efficiency power amplifier design at microwave/mmwave frequencies as well as solid EM and communication systems background.
Design state-of-the-art power amplifiers at mm-wave frequencies, focusing mainly on silicon technologies.
Develop mm-wave transmitter front-ends and determine the system architecture for the complete signal chain from antenna to bits.
Determine the IC-level implications of system-level requirements of next-generation communication networks.
Design and simulate on-chip EM structures and work on co-optimization of IC/package interfaces.
10+ years of experience in millimeter-wave/RF integrated power amplifier design in SiGe, CMOS, and SOI technologies.
Extensive experience in various high-efficiency power amplifier topologies specifically at high frequency and with fully on-chip integrated implementations.
Strong know-how and hands-on expertise in the analysis and optimization of transmitter front-ends in response to complex modulated waveforms such as 5GNR. This includes practical modeling and circuit simulations of power amplifiers and transmitter chains with time-sampled waveforms.
Solid understanding of RF circuit design fundamentals and RF communication architectures.
Strong fundamentals in electromagnetics theory and communication systems.
Experience in EM simulations both for on-chip and package parts.
Good communication skills and effective teamwork
Renesas Electronics America is an equal opportunity and affirmative action employer, committed to celebrating diversity and fostering a work environment free of discrimination on the basis of sex, race, religion, national origin, gender, gender identity, gender expression, age, sexual orientation, military status, veteran status, or any other basis protected by federal, state or local law.