VisIC was established in 2010 to be a technology licensor and a provider of high-voltage (650V and above), high-volume GaN devices to the rapidly growing power conversion market. The technical team had over 20 years of cumulative experience in design, manufacture, and application of GaN-based RF devices when they incorporated VisIC. Applying their in-depth understanding of the core materials and associated physics of GaN-based devices, they have created a true GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor (MISHEMT) that is native normally-OFF.